Sub-10 nm Ta Channel Responsible for Superior Performance of a HfO2 Memristor.
Jiang H, Han L, Lin P, Wang Z, Jang MH, Wu Q, Barnell M, Yang JJ, Xin HL, Xia Q. Sub-10 nm Ta Channel Responsible for Superior Performance of a HfO2 Memristor. Sci Rep. 2016 06 23; 6:28525.